Blank Cover Image

GATE QUALITY OXIDES PREPARED BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION

著者名:
Kuehn, R. T.
Xu, X.
Holcombe, D. J.
Misra, V.
Wortman, J. J.
Hauser, J. R.
Wang, Q. -F.
Maher, D. M.
さらに 3 件
掲載資料名:
Gas-phase and surface chemistry in electronic materials processing : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
334
発行年:
1994
開始ページ:
531
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992337 [1558992332]
言語:
英語
請求記号:
M23500/334
資料種別:
国際会議録

類似資料:

1 国際会議録 INFLUENCE OF SURFACE PRE-CLEANING ON ELECTRICAL PROPERTIES OF RAPID THERMAL OXIDE AND RAPID THERMAL CHEMICAL VAPOR DEPOSITION OXIDE

Xu, Xiaoli, Kuehn, R.T., Melzak, J.M., Hames, G.A., Wortman, J.J., Ozturk, M.C., Nemanich, R.J., Harris, G., Maher, D.

Materials Research Society
7 国際会議録 Formation of Stacked Gate Oxides by Rapid-Thermal Processing

Misra, V., Heinisch, H.H., Henson, W.K., Hornung, B.E., Wortman, J.J.

Electrochemical Society
2 国際会議録 Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon-Germanium Films on SiO2 and Their Properties

Li, V. Z-Q, Mirabedini, M. R., Kuehn, R. T., Gladden, D., Batchelor, D., Christenson, K., Wortman, J. J., Ozturk, M. C., …

MRS - Materials Research Society
8 国際会議録 A Comparison of MOS Devices with In Situ Boron Doped Polysilicon and Poly-SiGe Gates Deposited in an RTCVD System using Si2H6 and B2H6 Gas Mixture

Mirabedini, M. R., Li, V. Z-Q., Acker, A. R., Kuehn, R. T., Venables, D., Ozturk, M. C., Wortman, J. J.

MRS - Materials Research Society
3 国際会議録 A dual-function UHV-Compatible chamber for (i) low-temperature plasma-assisted oxidation, and (ii) high-temperature rapid thermal processing of Si-based …

Hattangady, S., Xu, X-L, Watkins, M. J., Hornung, B., Misra, V., Lucovsky, G., Wortman, J. J.

MRS - Materials Research Society
9 国際会議録 Formation of Raised Source/Drain Junctions by Rapid Thermal Chemical Vapor Deposition

Ozturk, Mehmet C., Wortman, Jimmie J.

MRS - Materials Research Society
4 国際会議録 CONTROL OF Si-SiO2 INTERFACE PROPERTIES IN MOS DEVICES PREPARED BY PLASMA-ASSISTED AND RAPID THERMAL PROCESSES

Lucovsky, G., Yasuda, T., Ma, Y., Hattangady, S. V., Xu, X-L., Misra, V., Hornung, B., Wortman, J. J.

MRS - Materials Research Society
10 国際会議録 Interfacial Properties of Si-Si3N4 Formed by Remote Plasma Enhanced Chemical Vapor Deposition

Misra, V., Lazar, H., Kulkarni, M., Wang, Z., Lucovsky, G., Hauser, J. R.

MRS - Materials Research Society
5 国際会議録 ELECTRICAL PROPERTIES OF STACKED RTO/RTCVD OXIDES AS GATE DIELECTRICS

Misra, Y., Xu, X-L., Wortman, J. J.

MRS - Materials Research Society
11 国際会議録 Properties of Gate-Quality SiO2 Films Prepared by Electron Cyclotron Resonance Chemical Vapour Deposition in an Ultra-High Vacuum Processing System

Tao, Y., Landheer, D., Hulse, J. E., Xu, D. -X., Quance, T.

MRS - Materials Research Society
6 国際会議録 *RAPID THERMAL CHEMICAL VAPOR DEPOSITION OF GERMANIUM AND GERMANIUM/SILICON ALLOYS ON SILICON: NEW APPLICATIONS IN THE FABRICATION OF MOS TRANSISTORS

Ozturk, M. C., Grider, D. T., Ashburn, S. P., Sanganeria, M., Wortman, J. J.

Materials Research Society
12 国際会議録 Rapid Thrmal Chemical Vapor Deposition of SixGe1-x Alloys in Advanced MOSFET Processes

Grider T. D., Ozturk C. M., Ashburn S., Sanganeria M., Wortman J. J.

Kluwer Academic Publishers
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12