THE EFFECTS OF DEPOSITION PARAMETERS ON THE PROPERTIES OF SiO2 FILMS DEPOSITED BY MICROWAVE ECR PLASMAS

THE EFFECTS OF DEPOSITION PARAMETERS ON THE PROPERTIES OF SiO2 FILMS DEPOSITED BY MICROWAVE ECR PLASMAS

著者名:

掲載資料名:

Gas-phase and surface chemistry in electronic materials processing : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

334

発行年:

1994

開始ページ:

373

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992337 [1558992332]

言語:

英語

請求記号:

M23500/334

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017981
シリーズID:	PA00000011
会議名:	Symposium on gas-phase and surface chemistry in electronic materials processing
回次:	1993
会議開催地:	Boston, MA, USA
会議開催年:	1993.11.29-1993.12.02

類似資料:

1 国際会議録 PROPERTIES OF SiO2 FILMS FABRICATED BY MICROWAVE ECR PLASMA PROCESSING WITH AND WITHOUT ENERGETIC PARTICLE BOMBARDMENT DURING FILM DEPOSITION. PART II: … Chau, T. T., Mejia, S. R., Kao, K. C. Materials Research Society	7 国際会議録 THE CHEMICAL INTERFACE OF MICROWAVE PLASMA DEPOSITED SiO2 FILMS Parks, C. C., Robinson, B., Leavy Jr., H. J., Childs, K. D., Coyle, Jr. G. J. Materials Research Society
2 国際会議録 PROPERTIES OF Si02 FILMS FABRICATED BY MICROWAVE ECR PLASMA PROCESSING WITH AND WITHOUT ENERGETIC PARTICLE BOMBARDMENT DURING FILM DEPOSITION PART I. … Chau, T. T., Mejia, S. R., Kao, K. C. Materials Research Society	8 国際会議録 PLASMA PARAMETER AND FILM QUALITY IN THE ECR-PLASMA-CVD Nakayama, Y., Kondoh, M., Hitsuishi, K, Kawamura, T. Materials Research Society
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4 国際会議録 Deposition of High Quality SiO2 Films Using TEOS by ECR Plasma Sano, K., Tamamaki, H., Nomura, M., Wickramanayaka, S., Nakanishi, Y., Hatanaka, Y. MRS - Materials Research Society	10 国際会議録 MASS SPECTROMETRIC STUDY OF ECR MICROWAVE PLASMA ETCHING OF Si3N4 FILMS Jin, Ming, Kao, Kwan C Materials Research Society
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6 国際会議録 PROPERTIES OF DOPED a-Si:H FILMS DEPOSITED BY ECR PLASMA CVD Murai, H., Hayama, M., Kobayashi, K., Yamazaki, T. Materials Research Society	12 国際会議録 In Situ Control during Growth of SiO2 Films on InP by ECR Plasma Joseph, J., Besland, M.P., Callard, S., Gagnaire, A., Lambrinos, M., Hollinger, G. Electrochemical Society

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