Characterization of modulation-doped n-AlxGa1-xAs/GaAs heterostructure using spectroscopic ellipsometry and photoreflectance

Characterization of modulation-doped n-AlxGa1-xAs/GaAs heterostructure using spectroscopic ellipsometry and photoreflectance

著者名:

Wong,C.C. ( Tokyo Univ.of Agriculture & Technology )
Mochizuki,M.
Yaguchi,H.
Saitoh,T.
Xiong,Y.-M.

掲載資料名:

International Symposium on Polarization Analysis and Applications to Device Technology

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2873

発行年:

1996

開始ページ:

226

終了ページ:

229

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819422712 [0819422711]

言語:

英語

請求記号:

P63600/2873

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017962
シリーズID:	PA00000029
会議名:	International Symposium on Polarization Analysis and Applications to Device Technology
回次:	1996
会議開催地:	Yokohama, Japan
会議開催年:	1996.06.12-1996.06.14

類似資料:

1 国際会議録 Characterization of Sio-doped GaAs using photoellipsometry and photoreflectance Mochizuki,M., Kobayashi,K., Yaguchi,H., Saitoh,T., Xiong,Y.-M. SPIE-The International Society for Optical Engineering	7 国際会議録 CHARACTERIZATION OF DIRECTLY BONDED SILICON-ON-INSULATOR STRUCTURES USING SPECTROSCOPIC ELLIPSOMETRY T. Saitoh, M.E. El-Ghazzawi, T. Oka, N. Natsuaki Electrochemical Society
2 国際会議録 Photoreflectance Spectroscopy of Molecular Beam Epitaxy Grown AlxGa1-xAs/GaAs Modulation Doped Heterostructure Srinivasan,T., Muralidharan,R., Jain,R.K., Mokerov,V.G. Narosa Publishing House	8 国際会議録 Selective Etching of GaAs/AlxGa1-xAs for Heterostructure Field Effect Transistors Kitano, T., Izumi, S., Minami, H., Takano, H., Sato, K., Ishihara, O. Electrochemical Society
3 国際会議録 Nondestructive Characterization of n-AlGaAs/GaAs Heterojunction Structures Using Photoellipsometry Wong, C.C., Saitoh, T., Xiong, Y.M. Electrochemical Society	9 国際会議録 Photoreflectance investigation of δ-doped MOVPE-grown AlxGa1-xAs layers Nowaczyk-Utko,M., Sek,G., Misiewicz,J., Sciana,B., Radziewicz,D., Tlaczala,M.J. SPIE-The International Society for Optical Engineering
4 国際会議録 Photoellipsometry Analysis of Doped GaAs Kobayashi, K., Wong, C.C., Saitoh, T., Xiong, Y.M. Electrochemical Society	10 国際会議録 Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures Zheng, Z.W., Shen, B., Jiang, C.P., Guo, S.L., Liu, J., Zhou, H.M., Zhang, R., Shi, Y., Zheng, Y.D., Zheng, G.Z., Chu, … Materials Research Society
5 国際会議録 Mobility of Electrons in Modulation-Doped Single Barrier GaAs/AlxGa1-xAs/GaAs Heterostructures Sahu,T., Nayak,S.K., Patnaik,Jayanti SPIE-The International Society for Optical Engineering, Narosa	11 国際会議録 INTERFACE DEFECTS IN GaAs AND GaAs-AlXGa1-XAs GROWN ON Ge Cho, N. -H., McKernan, S., Wagner, D. K., Carter, C. B. Materials Research Society
6 国際会議録 Investigation of anisotropic effect on the optical properties of InxGa1-xP using spectroscopic ellipsometry Watanabe,K., Saitoh,T., Xiong,Y.-M. SPIE-The International Society for Optical Engineering	12 国際会議録 Modulation Doped AlxGa1-xAs/GaAs Field Effect Transistors (MODFET): Analysis, Fabrication and Performance Morkoc H. Martinus Nijhoff Publishers

1

2

3

4

5

6

7

8

9

10

11

12