Detectability and printability of programmed defect reticle for 256-Mb dram

Detectability and printability of programmed defect reticle for 256-Mb dram

著者名:

Park,J.H. ( Samsung Electronics Co.,Ltd. )
Cho,H.-K.
Kim,Y.-H.
Lee,K.-H.
Yoon,H.-S.

掲載資料名:

Photomask and X-Ray Mask Technology III

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2793

発行年:

1996

開始ページ:

300

終了ページ:

311

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819421791 [0819421790]

言語:

英語

請求記号:

P63600/2793

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017954
シリーズID:	PA00000029
会議名:	Photomask and Next Generation Lithography Mask Technology : Photomask and X-Ray Mask Technology
回次:	1996 : 3rd
会議開催地:	Kawasaki City, Kanagawa, Japan
会議開催年:	1996.04.18-1996.04.19

類似資料:

1 国際会議録 Detectability and printability of programmed defects in the contact layer for 256-Mb-DRAM grade reticle Kim,Y.H., Park,J.H., Lee,K.H., Cho,H.K., Yoon,H.S. SPIE-The International Society for Optical Engineering	7 国際会議録 Aberration sensitivity control for the isolation layer in low-k1 DRAM process Cho, B.-H., Yim, D., Park, C.-H., Lee, S.-H., Yang, H.-J., Choi, J.-H., Shin, Y.-C., Kim, C.-D., Choi, J.-S., Kang, … SPIE-The International Society for Optical Engineering
2 国際会議録 FIB repair of opaque defects for 64-Mb-DRAM-level binary masks Lee,K.H., Cho,H.K., Park,J.H., Kim,Y.H., Yoon,H.S., Sohn,J.M. SPIE-The International Society for Optical Engineering	8 国際会議録 Process Integration for DRAM Cell Transistor Optimization* Lee, S., Park, S., Kim, I., Yoon, H. Electrochemical Society
3 国際会議録 Evaluation of litho printability of DRAM contact hole patterns with various programmed defects K. Seo, S. Lee, H. Kim, D. Hwang, S. Kim, G. Jeong, O. Han, C. Chen, D. Yee, E. Kim, K. Park, N. Kim, S. Choi, D. Kim, … SPIE - The International Society of Optical Engineering	9 国際会議録 The study of contact hole MEEF and defect printability Jeong, C.-Y., Lim, Y.H., Kim, H.I., Park, J.L., Choi, J.S., Lee, J.G. SPIE - The International Society of Optical Engineering
4 国際会議録 KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning process Kim,J., Kim,S.-C., Kim,H.-C., Lee,S.-I., Choi,Y.-K., Ham,Y.-M., Han,O. SPIE-The International Society for Optical Engineering	10 国際会議録 The verification of printability about marginal defects and the detectability at the inspection tool in sub 50nm node H. Lee, G. Jeong, K. Seo, S. Kim, C. Kim Society of Photo-optical Instrumentation Engineers
5 国際会議録 ArF issues of 90-nm-node DRAM device integration Goo, D.-H., Kim, B.-S., Park, J.-S., Yoon, K.-S., Lee, J.-H., Cho, H.-K., Han, W.-S., Moon, J.-T. SPIE-The International Society for Optical Engineering	11 国際会議録 Defect printability study with programmed defects on halftone reticles Dettmann,W., Haffner,H., Heumann,J.P., Liebe,R., Ludwig,R., Moses,R. SPIE-The International Society for Optical Engineering
6 国際会議録 Phase defect printability analysis for chromeless phase lithography technology Huh, S., Park, J.H., Chung, D.-H., Kim, C.-H., Shin, I.-K., Choi, S.-W., Sohn, J.-M. SPIE-The International Society for Optical Engineering	12 国際会議録 Validation of ArF chromeless PSM in the sub-100-nm node DRAM cell Lee, J.-H., Chung, D.-H., Cha, D.-C., Kim, H.-S., Park, J.-S., Nam, D.-G., Woo, S.-K., Cho, H.-S., Han, W.-S. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12