Hydrogenation of GaAs during MBE Growth
- 著者名:
Bosacchi,A. Franchi,S. Gombia,E. Mosca,R. Allegri,P. Avanzini,V. Ghezzi,C. - 掲載資料名:
- Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 38-41
- 発行年:
- 1989
- 巻:
- Part3
- 開始ページ:
- 1027
- 終了ページ:
- 1032
- 出版情報:
- Aederlmannsdorf, Switzwelns: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878495849 [0878495843]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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5
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The Effects of Impurity Co-Doping on the Electrical Properties of Erbium Ions in Crystalline silicon
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