Reduction of Capture Barrier Height of Pressure-Induced Deep Donors(DX Center)in GaAs:Si
- 著者名:
- 掲載資料名:
- Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 38-41
- 発行年:
- 1989
- 巻:
- Part2
- 開始ページ:
- 851
- 終了ページ:
- 856
- 出版情報:
- Aederlmannsdorf, Switzwelns: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878495849 [0878495843]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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