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Reduction of Capture Barrier Height of Pressure-Induced Deep Donors(DX Center)in GaAs:Si

著者名:
掲載資料名:
Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988
シリーズ名:
Materials science forum
シリーズ巻号:
38-41
発行年:
1989
巻:
Part2
開始ページ:
851
終了ページ:
856
出版情報:
Aederlmannsdorf, Switzwelns: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495849 [0878495843]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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