Defects in High-Dose Oxygen Implanted Silicon

Defects in High-Dose Oxygen Implanted Silicon

著者名:

掲載資料名:

Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988

シリーズ名:

Materials science forum

シリーズ巻号:

38-41

発行年:

1989

巻:

Part1

開始ページ:

207

終了ページ:

212

出版情報:

Aederlmannsdorf, Switzwelns: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495849 [0878495843]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017895
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconduotors : ICDS
回次:	15th
会議開催地:	Budapest, Hungary
会議開催年:	1988.08.22-1988.08.26

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