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Residual defects after pulsed laser annealing of ion implanted silicon

著者名:
  • Mesli, a. ( Centre de Recherche nucleaires, Groupe de Physique et Applications des Semiconducteurs (PHASE) )
  • Muller, J.C. ( Centre de Recherche nucleaires, Groupe de Physique et Applications des Semiconducteurs (PHASE) )
  • Salles, D. ( Centre de Recherche nucleaires, Groupe de Physique et Applications des Semiconducteurs (PHASE) )
  • Siffert, P. ( Centre de Recherche nucleaires, Groupe de Physique et Applications des Semiconducteurs (PHASE) )
掲載資料名:
Defects in semiconductors : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposia proceedings
シリーズ巻号:
2
発行年:
1981
開始ページ:
451
終了ページ:
455
出版情報:
New York: North Holland
ISSN:
02729172
ISBN:
9780444005960 [044400596X]
言語:
英語
請求記号:
M23500/2
資料種別:
国際会議録

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