Scanning tunneling microscope-induced luminescence studies of defects in GaN layers and heterostructures

Scanning tunneling microscope-induced luminescence studies of defects in GaN layers and heterostructures

著者名:

Evoy, S.

掲載資料名:

Optical microstructural characterization of semiconductors : sympoisum held November 29-30, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

588

発行年:

2000

開始ページ:

19

出版情報:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994966 [1558994963]

言語:

英語

請求記号:

M23500/588

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017583
シリーズID:	PA00000011
会議名:	MRS Fall Meeting
回次:	1999
会議開催地:	Boston, MA, USA
会議開催年:	1999.11.29-1999.12.01

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