EFFECTS OF HALOGEN-CONTAINING GAS PLASMA AND RAPID THERMAL ANNEAL TREATMENT ON THE REACTIVE ION ETCHED SILICON

EFFECTS OF HALOGEN-CONTAINING GAS PLASMA AND RAPID THERMAL ANNEAL TREATMENT ON THE REACTIVE ION ETCHED SILICON

著者名:

掲載資料名:

Diagnostic techniques for semiconductor materials processing : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

324

発行年:

1994

開始ページ:

481

出版情報:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992238 [1558992235]

言語:

英語

請求記号:

M23500/324

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017537
シリーズID:	PA00000011
会議名:	Symposium on diagnostic techniques for semiconductor materials processing
回次:	1993
会議開催地:	Boston, MA, USA
会議開催年:	1993.11.29-1993.12.02

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