REACTIVE ION ETCHING OF GaN THIN FILMS

REACTIVE ION ETCHING OF GaN THIN FILMS

著者名:

Manfra, Michael

掲載資料名:

Diagnostic techniques for semiconductor materials processing : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

324

発行年:

1994

開始ページ:

477

出版情報:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992238 [1558992235]

言語:

英語

請求記号:

M23500/324

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017537
シリーズID:	PA00000011
会議名:	Symposium on diagnostic techniques for semiconductor materials processing
回次:	1993
会議開催地:	Boston, MA, USA
会議開催年:	1993.11.29-1993.12.02

類似資料:

1 国際会議録 GROWTH OF TETRAHEDRAL PHASES OF BORON NITRIDE THIN FILMS BY REACTIVE SPUTTERING Moustakas, T.D., Lei, T., Molnar, R.J., Fountzoulas, C., Oles, E.J. Materials Research Society	7 国際会議録 Real-Time Feedback Control of Reactive Ion Etching of Amorphous Silicon for Thin Film Transistor Fabrication Herman, J.S., Benson, T.E., Patterson, O.D., Chen, C.Y., Demos, A.T., Khargonekar, P.P., Terry, F.L., Jr., Elta, M.E. Electrochemical Society
2 国際会議録 *GROWTH AND DOPING OF GaN FILMS BY ECR-ASSISTED MBE Moustakas, T.D., Molnar, R.J. Materials Research Society	8 国際会議録 Growth of InGaN Films by MBE at the Growth Temperature of GaN Singh, R., Moustakas, T. D. MRS - Materials Research Society
3 国際会議録 HIGH MOBILITY GaN FILMS PRODUCED BY ECR-ASSISTED MBE Molnar, R.J., Lei, T., Moustakas, T.D. Materials Research Society	9 国際会議録 Reactive Ion Etching of AlN, AlGaN, and GaN Using BCl3 Hughes, W. C., Rowland, W. H., Jr., Johnson, M. A. L., Cook, J. W., Jr., Schetzina, J. F. MRS - Materials Research Society
4 国際会議録 Nanometre Scale Reactive Ion Etching of GaN Epilayers Coquillat,D., Murad,S.K., Ribayrol,A., Smith,C.J.M., Rue,R.M.De La, Wilkinson,C.D.W., Briot,O., Aulombard,R.L. Trans Tech Publications	10 国際会議録 Wet etching of ion-implanted GaN crystals by AZ-400K photoresist Carosella, C. A., Molnar, B., Schiestel, S., Sprague, J. A. MRS-Materials Research Society
5 国際会議録 A COMPARATIVE STUDY OF GaN FILMS GROWN ON DIFFERENT FACES OF SAPPHIRE BY ECR-ASSISTED MBE Moustakas, T.D., Molnar, R.J., Lei, T., Menon, G., Eddy, Jr., C.R. Materials Research Society	11 国際会議録 Reactive ion etching of GaN in BCl3/N2 plasmas Fedison, J.B., Chow, T.P., Lu, H., Bhat, I.B. Electrochemical Society
6 国際会議録 Epitaxial Growth of GaN Films Produced by ECR-Assisted MBE Moustakas, T. D. MRS - Materials Research Society	12 国際会議録 ASSESSMENT OF SURFACE DAMAGE OF GALLIUM ARSENIDE DUE TO REACTIVE ION ETCHING Puttock, M. S., Thomas, H., Morgan, D. V., Rossow, U., Zahn, D. R. T., Richter, W., Hilton, K. P., Woodward, J. Materials Research Society

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