IN SITU SUBSTRATE TEMPERATURE MEASUREMENT DURING MBE BY BAND-EDGE REFLECTION SPECTROSCOPY
- 著者名:
- 掲載資料名:
- Diagnostic techniques for semiconductor materials processing : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 324
- 発行年:
- 1994
- 開始ページ:
- 353
- 出版情報:
- Pittsburgh: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992238 [1558992235]
- 言語:
- 英語
- 請求記号:
- M23500/324
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
DIRECT HETEROEPITAXIAL GROWTH OF ZnTe(100) AND CdZnTe(100)/ZnTe(100) ON Si(100) SUBSTRATES BY MBE
Materials Research Society |
7
国際会議録
Near-band-edge optical properties of MBE-grown ZnSe epilayers on GaAs by modulation spectroscopy
SPIE-The International Society for Optical Engineering |
2
国際会議録
Direct heteroepitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates by MBE
MRS - Materials Research Society |
Electrochemical Society |
Society of Photo-optical Instrumentation Engineers |
SPIE-The International Society for Optical Engineering |
Electrochemical Society | |
5
国際会議録
MBE growth of HgCdTe IR detector structures on Si substrates:recent advances and future prospects
SPIE-The International Society for Optical Engineering |
Materials Research Society |
MRS - Materials Research Society |
SPIE - The International Society for Optical Engineering |