On the Origin of the Coarse and Fine Contrast Modulation in Epitaxial InGaAs Strained Layers Grown on InP Substrates

On the Origin of the Coarse and Fine Contrast Modulation in Epitaxial InGaAs Strained Layers Grown on InP Substrates

著者名:

掲載資料名:

Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

379

発行年:

1995

開始ページ:

159

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992825 [1558992820]

言語:

英語

請求記号:

M23500/379

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017534
シリーズID:	PA00000011
会議名:	Symposium on strained layer epitaxy-materials, processing, and device applications
回次:	1995
会議開催地:	San Francisco, CA, USA
会議開催年:	1995.04.17-1995.04.19

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