Formation of Amorphous Interlayers by Solid-State Diffusion in Ti Thin Films on Si-Ge Layers on Silicon and Germanium

Formation of Amorphous Interlayers by Solid-State Diffusion in Ti Thin Films on Si-Ge Layers on Silicon and Germanium

著者名:

掲載資料名:

Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

379

発行年:

1995

開始ページ:

47

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992825 [1558992820]

言語:

英語

請求記号:

M23500/379

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017534
シリーズID:	PA00000011
会議名:	Symposium on strained layer epitaxy-materials, processing, and device applications
回次:	1995
会議開催地:	San Francisco, CA, USA
会議開催年:	1995.04.17-1995.04.19

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