p-Type Conductivity with a High Hole Mobility in Cubic GaN/GaAs Epilayers

p-Type Conductivity with a High Hole Mobility in Cubic GaN/GaAs Epilayers

著者名:

As, D. J.

掲載資料名:

III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

449

発行年:

1997

開始ページ:

615

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993532 [1558993533]

言語:

英語

請求記号:

M23500/449

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017523
シリーズID:	PA00000011
会議名:	Symposium on III-V nitrides
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.06

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2 国際会議録 Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si As, D. J., Richter, A., Busch, J., Schottker, B., Lubbers, M., Mimkes, J., Schikora, D., Lischka, K., Kriegseis, W., … MRS-Materials Research Society	8 国際会議録 Surface Reconstruction and MBE Growth of Cubic GaN on(001)GaAs:A Total Energy Study Silva,J.L.F.da, Enderlein,R., Scolfaro,L.M.R., Leite,J.R., Tabata,A., Lischka,K., Schikora,D., Bechstedt,F. Trans Tech Publications
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4 国際会議録 Depth-Resolved and Excitation Power Dependent Cathodo-luminescence of MBE-Grown Cubic GaN Epilayers As, D. J., Schottker, C. Wang. B., Schikora, D., Lischka, K. MRS - Materials Research Society	10 国際会議録 Time resolved photoluminescence of cubic Mg doped GaN Seitz, R., Gaspar, C., Monteiro, T., Pereira, E., Schoettker, B., Frey, T., As, D. J., Schikora, D., Lischka, K. MRS-Materials Research Society
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