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Characterization of OMVPE-Grown AlGaInN Heterostructures

著者名:
Bour, D. P.
Chung, H. F.
Gotz, W.
Romano, L.
Krusor, B. S.
Hofstetter, D.
Rudaz, S.
Kuo, C. P.
Ponce, F. A.
Johnson, N. M.
Craford, M. G.
Bringans, R. D.
さらに 7 件
掲載資料名:
III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
449
発行年:
1997
開始ページ:
509
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993532 [1558993533]
言語:
英語
請求記号:
M23500/449
資料種別:
国際会議録

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1 国際会議録 Characterization of AlGaInN heterostructures grown by OMVPE

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7 国際会議録 Materials Characterization on Optically Pumped InGaN/GaN Lasers by Far-Field Measurements and Fourier Analysis of the Emission Spectrum

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2 国際会議録 Characterization of AlGalnN heterostructures and laser diodes (Invited Paper)

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8 国際会議録 Phase Separation in InGaN/GaN Multiple-Quantum-Wells

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3 国際会議録 Visible laser diodes for printing

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9 国際会議録 OMVPE GROWTH OF MATERIALS FOR RED LASER DIODES

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4 国際会議録 Disordering of InGaN/GaN Superlattices After High-Pressure Annealing

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10 国際会議録 High-brightness AlGaInN light-emitting diodes

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5 国際会議録 Material characterization for III-nitride-based light emitters (Invited Paper)

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11 国際会議録 Shallow and Deep Level Defects in GaN

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12 国際会議録 Spectroscopic Identification of the Acceptor-Hydrogen Complex in Mg-Doped GaN Grown by MOCVD

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