Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source | 東京工業大学附属図書館文献データベース

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Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source

著者名:

Leung, M. S. H.

Klockenbrink, R.

Kisielowski, C.

Liliental-Weber, Z.

さらに 5 件

掲載資料名:

III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

449

発行年:

1997

開始ページ:

221

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993532 [1558993533]

言語:

英語

請求記号:

M23500/449

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017523
シリーズID:	PA00000011
会議名:	Symposium on III-V nitrides
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.06

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