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Selective Growth GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy

著者名:
掲載資料名:
III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
449
発行年:
1997
開始ページ:
107
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993532 [1558993533]
言語:
英語
請求記号:
M23500/449
資料種別:
国際会議録

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