AlxGa1-xN-Based Materials and Heterostructures

AlxGa1-xN-Based Materials and Heterostructures

著者名:

Kung, P.

掲載資料名:

III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

449

発行年:

1997

開始ページ:

79

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993532 [1558993533]

言語:

英語

請求記号:

M23500/449

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017523
シリーズID:	PA00000011
会議名:	Symposium on III-V nitrides
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.06

類似資料:

1 国際会議録 UV photodetectors based on AlxGa1-xN grown by MOCVD Saxler,A., Walker,D., Zhang,X., Kung,P., Xu,J., Razeghi,M. SPIE-The International Society for Optical Engineering	7 国際会議録 Growth of GaN Without Yellow Luminescence Zhang, X., Kung, P., Walker, D., Saxler, A., Razeghi, M. MRS - Materials Research Society
2 国際会議録 Intrinsic AlxGa1-xN photodetectors for the entire compositional range Walker,D., Zhang,X., Saxler,A., Kung,P., Xu,J., Razeghi,M. SPIE-The International Society for Optical Engineering	8 国際会議録 Recent advances in III-nitride materials: characterrization and device applications (Invited Paper) Razeghi,M., Zhang,X., Kung,P., Saxier,A., Walker,D., Lim,K. Y., Kim,K. S. SPIE-The International Society for Optical Engineering
3 国際会議録 Electrical characterization of AlxGa1-xN for UV photodetector applications Saxler,A.W., Ahoujja,M., Mitchel,W.C., Kung,P., Walker,D., Razeghi,M. SPIE - The International Society for Optical Engineering	9 国際会議録 AlxGa1-xN p-i-n photodiodes on sapphire substrates Walker,D., Kung,P., Sandvik,P., Wu,J.-J., Hamilton,M., Lee,I.-H., Diaz,J., Razeghi,M. SPIE - The International Society for Optical Engineering
4 国際会議録 New Developments in III-Nitride Material and Device Applications Razeghi,M., Saxler,A., Kung,P., Walker,D., Zhang,X., Kim,K.S., Vydyanath,H.R., Solomon,J., Ahoujja,M., Mitchel,W.C. Narosa Publishing House	10 国際会議録 AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications McClintock,R., Sandvik,P.M., Mi,K., Shahedipour,F., Yasan,A., Jelen,C.L., Kung,P., Razeghi,M. SPIE-The International Society for Optical Engineering
5 国際会議録 Electroluminescence of 111-nitride double heterostructure light emitting diodes with silicon and magnesium doped InGaN Saxler,A., Kim,K.S., Walker,D., Kung,P., Zhang,X., Brown,G.J., Mitchel,W.C., Razeghi,M. Trans Tech Publications	11 国際会議録 GaN,GaAIN,and AIN for use in UV detectors for astrophysics:an update Kung,P., Saxler,A., Zhang,X., Walker,D., Razeghi,M., Ulmer,M.P. SPIE-The International Society for Optical Engineering
6 国際会議録 GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio Kung,P., Zhang,X., Walker,D., Saxler,A., Razeghi,M. SPIE-The International Society for Optical Engineering	12 国際会議録 High-Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates Saxler, A., Capano, M. A., Mitchel, W. C., Kung, P., Zhang, X., Walker, D., Razeghi, M. MRS - Materials Research Society

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