Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for Amorphizing Implants

Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for Amorphizing Implants

著者名:

掲載資料名:

Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

438

発行年:

1997

開始ページ:

27

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993426 [1558993428]

言語:

英語

請求記号:

M23500/438

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017522
シリーズID:	PA00000011
会議名:	Symposium on materials modification and synthesis by ion beam processing
回次:	1996
会議開催地:	Boston, MA, USA
会議開催年:	1996.12.02-1996.12.05

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1 国際会議録 Modeling of Dislocation Loop Growth and Transient-Enhanced Diffusion in Silicon for Amorphizing Implants Gencer, Alp H., Dunham, Scott T. MRS - Materials Research Society	7 国際会議録 Modeling of Cu Surface Precipitation and Out-Diffusion From Silicon Wafers Hsiu-Wu Guo, Scott T. Dunham Materials Research Society
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