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Generation of Hole Traps in Silicon Dioxide Under Fowler-Nordheim Stress

著者名:
掲載資料名:
Materials reliability in microelectronics VI : symposium held April 8-12, 1996, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
428
発行年:
1996
開始ページ:
317
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993310 [1558993312]
言語:
英語
請求記号:
M23500/428
資料種別:
国際会議録

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