Temperature Dependence of Nitrogen Accumulation at SiO2/Si by N2O- and by NO-Oxidation

Temperature Dependence of Nitrogen Accumulation at SiO2/Si by N2O- and by NO-Oxidation

著者名:

掲載資料名:

Rapid thermal and integrated processing IV : symposium held April 17-20, 1995, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

387

発行年:

1995

開始ページ:

265

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992900 [1558992901]

言語:

英語

請求記号:

M23500/387

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017517
シリーズID:	PA00000011
会議名:	Symposium on rapid thermal and integrated processing
回次:	4th
会議開催地:	San Francisco, CA, USA
会議開催年:	1995.04.17-1995.04.20

類似資料:

1 国際会議録 Influence of Boron Doping on Oxide Precipitate Nucleation and Gettering of Iron Impurities in Low Thermal Budget Processing of Czochralski Silicon Kissinger, G., Vanhellemont, J., Morgenstern, G., Blietz, M., Tittelbach-Helmrich, K., Obermejer, G., Wahlich, R. Electrochemical Society	7 国際会議録 The Effect of the PbO Loading in the Oxidative Coupling of Methane over PbO/SiO2 Catalysts Lugo, H. J., Teran, N., Villasmil, L., Castillo, G., Finol, D. M. Elsevier
2 国際会議録 Topographic Change at the SiO2/Si Interface with Multilayer Oxidation for Various Temperatures Hojo, D., Tokuda, N., Yamabe, K. Electrochemical Society	8 国際会議録 TEMPERATURE AND POLARIZATION DEPENDENCE OF THE OPTICAL ABSORPTION IN ZnGeP2 AT TWO MICROMETERS Shah, M., Ohmer, M. C., Fischer, D. W., Fernelius, N. C., Manasreh, M. O., Schunemann, P. G., Pollak, T. M. MRS - Materials Research Society
3 国際会議録 Fictive temperature dependence of photoinduced defects in Ge: SiO2 glass Horiuchi, N., Saito, K., Ikushima, A.J. SPIE-The International Society for Optical Engineering	9 国際会議録 Frequency Dependence of Accumulation Capacitance of MOS Structure with Ultrathin Oxide Layer Bhat,Vishwanath K., Bhat,K.N., Subrahmanyam,A. SPIE - The International Society for Optical Engineering
4 国際会議録 Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2 Pennington, G., Potbhare, S., Goldsman, N., Habersat, D.B., Lelis, A.J. Trans Tech Publications	10 国際会議録 Experimental Observations of the Redistribution of Implanted Nitrogen at the Si-SiO2 Interface During RTA Processing Lysaght, P. S., Nguyen, B., Bennett, J., Williamson, G., Torres, K., Gilmer, M., Luo, T-Y., Brady, D., Guan, J., Brown, … MRS - Materials Research Society
5 国際会議録 Temperature dependence of photoluminescence of rare-earth-ion-activated Y2SiO5 Liu,Y., Xu,C.-N., Nonaka,K., Tateyama,H. SPIE-The International Society for Optical Engineering	11 国際会議録 Catalytic functionalities of TiO2 based SiO2, Al2O3, ZrO2 mixed oxide hydroprocessing catalysts Rana, M. S., Srinivas, B. N., Maity, S. K., Dhar, G. M., Rao, T. S. R. Prasada Elsevier
6 国際会議録 Low Temperature SiO2 Etching Sato, M., Sugimoto, K., Adachi, K., Takehara, D., Uda, K., Sakiyama, K. Electrochemical Society	12 国際会議録 Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs - Challenges and Advances Pantelides, S.T., Wang, S., Franceschetti, A., Buczko, R., Di Ventra, M., Rashkeev, S.N., Tsetseris, L., Evans, M.H., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12