Reflection High-Energy Electron Diffraction Intensity Oscillations - An Effective Tool of Si and GexSil-x Molecular Beam Epitaxy

Reflection High-Energy Electron Diffraction Intensity Oscillations - An Effective Tool of Si and GexSil-x Molecular Beam Epitaxy

著者名:

Sakamoto T.

掲載資料名:

Thin film growth techniques for low-dimensional structures

シリーズ名:

NATO ASI series. Series B, Physics

シリーズ巻号:

163

発行年:

1987

開始ページ:

225

終了ページ:

245

総ページ数:

21

出版情報:

New York: Plenum Press

ISBN:

9780306426865 [0306426862]

言語:

英語

請求記号:

N11479/163

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017217
シリーズID:	PA00000015
会議名:	NATO Advanced Research Workshop on Thin Film Growth Techniques for Low-Dimensional Structures
回次:	1986
会議開催地:	Brighton, UK
会議開催年:	1986.09.15-1986.09.19

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