76 Effect of impurity concentration on 1.54-ｦﾌm emission from GaN:Er

76 Effect of impurity concentration on 1.54-ｦﾌm emission from GaN:Er

著者名:

Abernathy,C.R. ( Univ.of Florida )

掲載資料名:

Rare-earth-doped materials and devices IV : 26-27 January 2000, San Jose, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3942

発行年:

2000

開始ページ:

76

終了ページ:

86

出版情報:

Bellingham, Washington: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819435590 [0819435597]

言語:

英語

請求記号:

P63600/3942

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017171
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Rare-Earth-Doped Materials and Devices
回次:	2000 : 4th
会議開催地:	San Jose, CA, USA
会議開催年:	2000.01.26-2000.01.27

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