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Performance Trade-offs by the use of High-K Gate Dielectrics in Sub 100 nm Channel Length MOSFETs

著者名:
掲載資料名:
Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3975
発行年:
2000
巻:
Part2
開始ページ:
896
終了ページ:
899
出版情報:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819436016 [0819436011]
言語:
英語
請求記号:
P63600/3975
資料種別:
国際会議録

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