ULSI MOS Transistors with Jet Vapour Deposited(JVD)Silicon Nitride for the Gate Insulator

ULSI MOS Transistors with Jet Vapour Deposited(JVD)Silicon Nitride for the Gate Insulator

著者名:

掲載資料名:

Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3975

発行年:

2000

巻:

Part2

開始ページ:

803

終了ページ:

810

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819436016 [0819436011]

言語:

英語

請求記号:

P63600/3975

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017117
シリーズID:	PA00000029
会議名:	International Workshop on the Physics of Semiconductor Devices
回次:	1999 : 10th
会議開催地:	Delhi, India
会議開催年:	1999.12.14-1999.12.18

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