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Temperature-Dependent Photoluminescence Study of High Silicon Doped AlGaAs and the Correlation Between the Photoluminescence Spectra and the Doping Level

著者名:
掲載資料名:
Epitaxial growth - principles and applications : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
570
発行年:
1999
開始ページ:
151
出版情報:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994775 [1558994777]
言語:
英語
請求記号:
M23500/570
資料種別:
国際会議録

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