The Transformations of the EL6 Deep-Level Defect in n-GaAs: Is EL6 a DX-Like Center?
- 著者名:
- 掲載資料名:
- Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 510
- 発行年:
- 1998
- 開始ページ:
- 481
- 出版情報:
- Warrendale, Pa: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994164 [1558994165]
- 言語:
- 英語
- 請求記号:
- M23500/510
- 資料種別:
- 国際会議録
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