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Aluminum and Electron-Irradiation-Induced Deep Levels in n-Type and p-Type 6H-SiC

著者名:
Gong, M.
Beling, C. D.
Fung, S.
Brauer, G.
Wirth, H.
Skorupa, W.
You, Z-P.
さらに 2 件
掲載資料名:
Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
510
発行年:
1998
開始ページ:
455
出版情報:
Warrendale, Pa: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994164 [1558994165]
言語:
英語
請求記号:
M23500/510
資料種別:
国際会議録

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