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Growth and Luminescence Properties of III-N:Er Materials Doped During Chemical-Beam Epitaxy

著者名:
MacKenzie, J. D.
Abernathy, C. R.
Pearton, S. J.
Hommerich, U.
Seo, J. T.
Ren, F.
Wilson, R. G.
Chen, P.
Zavada, J. M.
さらに 4 件
掲載資料名:
Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
510
発行年:
1998
開始ページ:
325
出版情報:
Warrendale, Pa: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994164 [1558994165]
言語:
英語
請求記号:
M23500/510
資料種別:
国際会議録

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