Blank Cover Image

Gettering of Iron and Surface Oxygen by High-Energy Boron Ion Implantation in Silicon

著者名:
掲載資料名:
Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
510
発行年:
1998
開始ページ:
233
出版情報:
Warrendale, Pa: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994164 [1558994165]
言語:
英語
請求記号:
M23500/510
資料種別:
国際会議録

類似資料:

1 国際会議録 The Mechanisms of Iron Gettering in Silicon by Boron Ion-Implantation

Benton, J.L., Stolk, P.A., Eaglesham, D.J., Jacobson, D.C., Cheng, J.Y., Poate, J.M., Myers, S.M., Haynes, T.E

Electrochemical Society
7 国際会議録 Boron Gettering by Fluorine in Ion-Implanted Silicon

Krasnobaev, L. Ya., Cuomo, J. J., Vyletalina, O. I.

MRS - Materials Research Society
2 国際会議録 Oxygen Stabilization of Damage Induced by MeV Ion Implantation

Jain, Amitabh, Mercer, Doug

MRS - Materials Research Society
8 国際会議録 Room-Temperature Migration of Ion-Implanted Boron in Silicon

Collart, E. J. H., Weemers, K., Gravesteijn, D. J., Berkum, J. G. M. van, Cowern, N. E. B.

MRS - Materials Research Society
3 国際会議録 Influence of oxygen-iron interaction on the external gettering of Fe in p-Si by polycrystalline silicon film

Mishra,K.K., Stinson,M., Lowell,J.K.

SPIE-The International Society for Optical Engineering
9 国際会議録 Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation

Robertson, L. S., Warnes, P. N., Jones, K. S., Earles, S. K., Law, M. E., Downey, D. F., Falk, S., Liu, J.

Materials Research Society
4 国際会議録 IMPURITY GETTERING BY IMPLANTED CARBON IN SILICON

Wong, H., Cheung, N.. W., Yu, K. M., Chu, P. K., Liu, J.

Materials Research Society
10 国際会議録 DEFECTS PRODUCED BY HIGH ENERGY OXYGEN IONS IMPLANTED IN SILICON

Crob, A., Grob, J. J.,, Perio, A., Thevenin, P., Siffert, P.

Materials Research Society
5 国際会議録 PLASMA IMMERSION ION IMPLANTATION FOR IMPURITY GETTERING IN SILICON

Wong, H., Qian, X. Y., Cheung, N. W., Lieverman, M. A., Brown, I. G., Yu, K. M.

Materials Research Society
11 国際会議録 The Effect of Oxygen on the Electrical Activation and Diffusion of Ion-Implanted Boron

Larsen, K. Kyllesbech, Stolk, P. A., Privitera, V., Berkum, J. G. M. van, Boer, W. B. de, Mannino, G., Cowern, N. E. B., …

MRS - Materials Research Society
6 国際会議録 Transient Enhanced Diffusion for Ultra Low Energy Boron, Phosphorus, and Arsenic Implantation in Silicon

Amitabh, Ning Yu, Mercer, Doug

MRS - Materials Research Society
12 国際会議録 Oxide charging induced by electron exposure in ion implant

Stuber,A., Lowell,J.K.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12