Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing

Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing

著者名:

Maeda, T.

掲載資料名:

Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

510

発行年:

1998

開始ページ:

209

出版情報:

Warrendale, Pa: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994164 [1558994165]

言語:

英語

請求記号:

M23500/510

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017062
シリーズID:	PA00000011
会議名:	Symposium on defect and impurity engineered semiconductors
回次:	2nd
会議開催地:	San Francisco, CA, USA
会議開催年:	1998.04.13-1998.04.17

類似資料:

1 国際会議録 OPTICAL EMISSION END-POINT DETECTION FOR VIA HOLE ETCHING IN InP AND GaAs POWER DEVICE STRUCTURES Pearton, S. J., Ren, F., Abernathy, C. R., Constantine, C. MRS - Materials Research Society	7 国際会議録 Comparison of Novel Chlorine, Bromine, and Iodine Plasma Chemistries for Anisotropic Trench Etching in GaN, InN, and AIN Cho, Hyun, Maeda, T., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Pearton, S. J., Shul, R. J., Han, J., Ren, F. MRS - Materials Research Society
2 国際会議録 Hydrogen Incorporation into III-V Nitrides During Processing Pearton, S.J., Shul, R.J., Wilson, R.G., Ren, F., Zavada, J.M., Abernathy, C.R., Vartuli, C.B., Lee, J.W., Mileham, … Electrochemical Society	8 国際会議録 Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN Pearton, S. J., Vartuli, C. B., Lee, J. W., Donovan, S. M., MacKenzie, J. D., Abernathy, C. R., Shul, R. J., McLane, G. … MRS - Materials Research Society
3 国際会議録 Chlorine-Based Plasma Etching of GaN Shul, R. J., Briggs, R. D., Pearton, S. J., Vartuli, C. B., Abernathy, C. R., Lee, J. W., Constantine, C., Barratt, C. MRS - Materials Research Society	9 国際会議録 Processing Challenges for GaN-Based Photonic and Electronic Devices Pearton, S. J., Ren, F., Shul, R. J., Zolper, J. C., Katz, A. MRS - Materials Research Society
4 国際会議録 HIGH DENSITY MAGNETICALLY CONFINED DRY ETCHING OF METALLIZATION AND DIELECTRICS IN GaAs DEVICE TECHNOLOGY Pearton, S. J., Abernathy, C. R., Ren, F., Lothian, J. R., Kopf, R. P., Katz, A. MRS - Materials Research Society	10 国際会議録 In Situ Monitoring of Etch Byproducts During Reactive Ion Beam Etching of GaAs in Chlorine/Argon Lee, J. W., Pearton, S. J., Abernathy, C. R., Vawter, G. A., Shul, R. J., Bridges, M. M., Willison, C. G. MRS - Materials Research Society
5 国際会議録 High-Density Plasma Etching of Group-III Nitride Films for Device Application Shul, R., Zhang, L, Baca, A., Han, J., Crawford, M., Willison, C., Pearton, S., Ren, F., Zolper, J., Lester, L. Electrochemical Society	11 国際会議録 High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar Lee, J.W., Pearton, S.J., Lambers, E.S., Mileham, J.R., Abernathy, C.R., Hobson, W.S., Ren, F., Shul, R.J. Electrochemical Society
6 国際会議録 The Role of Plasma Chemistry and Ion Density in Dry Etching of Nitrides Vartuli, C.B., Pearton, S.J., Abernathy, C.R., Shul, R.J., Ren, F. Electrochemical Society	12 国際会議録 Device Processing For GaN High Power Electronics Pearton, Stephen J., Cao, X.A., Cho, H., Lee, K.P., Monier, C., Ren, F., Dang, G., Zhang, A.P., Johnson, W., LaRoche, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12