Ultralow Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low-Temperature Processed Si/SiO2 Structures by a 900｡？30-Second Rapid Thermal Anneal

Ultralow Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low-Temperature Processed Si/SiO2 Structures by a 900｡？30-Second Rapid Thermal Anneal

著者名:

掲載資料名:

Rapid thermal and integrated processing VI : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

470

発行年:

1997

開始ページ:

355

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993747 [1558993746]

言語:

英語

請求記号:

M23500/470

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017058
シリーズID:	PA00000011
会議名:	Symposium on rapid thermal and integrated processing
回次:	6th
会議開催地:	San Francisco, CA, USA
会議開催年:	1997.04.01-1997.04.04

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