A Reversible Effect of Rapid Thermal Annealing of Indium in Ion Implanted Silicon

A Reversible Effect of Rapid Thermal Annealing of Indium in Ion Implanted Silicon

著者名:

掲載資料名:

Rapid thermal and integrated processing VI : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

470

発行年:

1997

開始ページ:

335

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993747 [1558993746]

言語:

英語

請求記号:

M23500/470

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017058
シリーズID:	PA00000011
会議名:	Symposium on rapid thermal and integrated processing
回次:	6th
会議開催地:	San Francisco, CA, USA
会議開催年:	1997.04.01-1997.04.04

類似資料:

1 国際会議録 Boron Gettering by Fluorine in Ion-Implanted Silicon Krasnobaev, L. Ya., Cuomo, J. J., Vyletalina, O. I. MRS - Materials Research Society	7 国際会議録 Rapid Thermal Annealing of Ion Implanted Strained Si1-xGex Thomsen,E.V., Larsen,A.Nylandsted, Hansen,J.L., Kringhoj,P., Shiryaev,S.Y., Weyer,G. Trans Tech Publications
2 国際会議録 A COMPARISON OF DIFFERENT TECHNIQUES FOR THE RAPID THERMAL ANNEALING OF ION IMPLANTS IN SILICON Wouters, D. J., Vanhellemont, J., Avau, D., Maes, H. E. Materials Research Society	8 国際会議録 Rapid Thermal Annealing os Ion Implanted Semiconductors Sealy J. B. Kluwer Academic Publishers
3 国際会議録 RAPID THERMAL ANNEAL AND FURNACE ANNEAL OF SILICON AND BERYLLIUM IMPLANTED GALLIUM ARSENIDE Yue, A. T., Long, S. I., Merz, J. L. Materials Research Society	9 国際会議録 EFFECT OF Si IMPLANTATION AND RAPID THERMAL ANNEALING ON GaAs/A1GaAs SUPERLATTICE DISORDERING Flood, J.D., Bahir, G., Merz, J.L., Kobayashi, J., Fukunaga, T., Ishida, K., Nakashima, H. Materials Research Society
4 国際会議録 RAPID THERMAL ANNEALING OF ION IMPLANTED p-n JUNCTIONS IN SILICON Ho, C.C., Kwor, R., Araujo, C., Gelpey, J. Materials Research Society	10 国際会議録 Characterization of Ion Implanted GaN Skromme, B. J., Martinez, G. L., Krasnobaev, L., Poker, D. B. Materials Research Society
5 国際会議録 THE EFFECT OF IMPLANT AND RAPID THERMAL ANNEALING TEMPERATURES ON ION BEAM MIXING OF TITANIUM SILICIDE Mattiussi, G.A., Whitton, J.L., Naem, A.A., Ho, Q. Materials Research Society	11 国際会議録 *DEFECT STRUCTURES AND ELETRICAL BEHAVIOR OF RAPID THERMALLY ANNEALED ION IMPLANTED SILICON Sadana, D. K. Materials Research Society
6 国際会議録 RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs AND InP Vaidyanathan, K. V., Dunlap, H. L. North-Holland	12 国際会議録 THE EFFECT OF RAPID THERMAL ANNEALING ON THE DISLOCATION STRUCTURE OF SILICON ON SAPPHIRE Aidow, M., Batstone, J.L., Pfeiffer, L., Phillips, J.M., Pond, R.C. Materials Research Society

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