Studies of Interface Demarcation and Structural Defects in Ga Doped Ge Single Crystals Using Synchrotron White Beam X-ray Topography

Studies of Interface Demarcation and Structural Defects in Ga Doped Ge Single Crystals Using Synchrotron White Beam X-ray Topography

著者名:

掲載資料名:

Applications of synchrotron radiation techniques to materials science III : symposium held April 8-12, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

437

発行年:

1996

開始ページ:

107

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993402 [1558993401]

言語:

英語

請求記号:

M23500/437

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017055
シリーズID:	PA00000011
会議名:	Symposium on applications of synchrotron radiation techniques to materials science
回次:	3rd
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.12

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