Blank Cover Image

Shallow and Low-Resistive Ohmic Contacts to p-In0.53Ga0.47As Based on Pd/Au and Pd/Sb Metallizations

著者名:
Ressel, P.
Wang, L. C.
Park, M. H.
Leech, P. W.
Reeves, G. K.
Kuphal, E.
さらに 1 件
掲載資料名:
Advanced metallization for future ULSI : symposium held April 8-11, 1996, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
427
発行年:
1996
開始ページ:
577
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993303 [1558993304]
言語:
英語
請求記号:
M23500/427
資料種別:
国際会議録

類似資料:

1 国際会議録 Thermal Stability in Pd-Based Contacts to p-Type In0.53Ga0.47 As Characterized by RBS

Leech, P. W., Ressel, P., Reeves, G. K., Zhou, W., Kuphal, E.

MRS - Materials Research Society
7 国際会議録 SHALLOW OHMIC CONTACTS TO p-InGaAs BASED ON Pd/Ge WITH IMPLANTED Zn OR Cd

Ressel, P., Strusny, H., Fritzsche, D., Krautle, H., Mause, K.

MRS - Materials Research Society
2 国際会議録 The Stability of Aging of Pd/Zn and Pt-Based Ohmic Contacts to p-InGaAs/InP

Leech, P. W., Reeves, G. K., Ressel, P.

MRS - Materials Research Society
8 国際会議録 Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure With Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures

Shen, B., Li, W.P., Wang, X.S., Yan, F., Zhang, R., Bi, Z.X., Shi, Y., Liu, Z.G., Zheng, Y.D., Someya, T., Arakawa, Y.

Materials Research Society
3 国際会議録 MICROSTRUCTURE, STRESS AND ELECTRICAL PROPERTIES OF THE HIGHLY STABLE W/p+-In0.53Ga0.47As OHMIC CONTACTS

Katz, A., Maher, D., Thomas, P.M., Weir, B.E., Dautremont-Smith, W.C., Kimerling, L.C.

Materials Research Society
9 国際会議録 "Ferroelectric Pb(Zr0.53, Ti0.47)O3 thin films for smart MEMS"

Maeda,R., Wang,Z., Chu,J., Lin,W.

SPIE-The International Society for Optical Engineering
4 国際会議録 ELECTRICAL TRANSPORT THROUGH METAL CONTACTS TO In0.53Ga0.47aS THIN FILMS

Lu, P. F., Tsui, D. C., Cox, H. M.

Materials Research Society
10 国際会議録 An interdigitated diffusion-based ln0.53Ga 0.47As lateral PIN photodiode

P. S. Menon, K. Kandiah, A. A. Ehsan, S. Shaari

Society of Photo-optical Instrumentation Engineers
5 国際会議録 OPTIMIZATION OF Pd/Zn/Pd/Au OHMIC CONTACTS TO p-TYPE InGaAs/InP

Leech, Patrick W., Reeves, Geoffrey K.

MRS - Materials Research Society
11 国際会議録 ELECTRICAL PROPERTIES OF n- AND p-TYPE In0.53Ga0.47 As LAYERS FORMED BY ION IMPLANTATION AND RAPID THERMAL (FLASH) ANNEAL

L:iu, S. G., Narayan, S. Y., Magee, C. W., Wu, C. P., Kolondra, F., Paczkowski, J., Capewell, D.

Materials Research Society
6 国際会議録 *INTERFACIAL MICROSTRUCTURE AND CARRIER CONDUCTION PROCESS IN Pt/Ti OHMIC CONTACT TO p-In0.53Ga0.47As FORMED BY RAPID THERMAL PROCESSING

Chu, S. N. G., Katz, A., Boone, T., Thomas, P. M., Riggs, V. G., Dautremont-Smith, W. C., Johnson Jr., W. D.

Materials Research Society
12 国際会議録 High Frequency Response of GaAs and In0.53Ga0.47As Quantum Structures

Ghosh,P.K., Chattopadhyay,D., Sarkar,S.K.

SPIE-The International Society for Optical Engineering, Narosa
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12