Blank Cover Image

AFM Analysis of ECR Dry-Etched InGaP, AllnP and AlGaP

著者名:
Ren, F.
Hobson, W. S.
Lothian, J. R.
Lopata, J.
Caballero, J. A.
Lee, J. W.
Pearton, S. J.
Cole, M. W.
さらに 3 件
掲載資料名:
Diagnostic techniques for semiconductor materials processing II : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
406
発行年:
1996
開始ページ:
209
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993099 [1558993096]
言語:
英語
請求記号:
M23500/406
資料種別:
国際会議録

類似資料:

1 国際会議録 Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source

Cole, M.W., Han, W.Y., Pfeffer, R.L., Eckart, D.W., Pang, S.W., Ko, K.K., Ren, F., Hobson, W.S., Lothian, J.R., Lopata, …

Electrochemical Society
7 国際会議録 Dry Etch Damage in InN, InGaN and InAlN

Pearton, S. J., Lee, J. W., MacKenzie, J. D., Vartuli, C. B., Donovan, S. M., Abernathy, C. R., Shul, R. J., Ren, F., …

MRS - Materials Research Society
2 国際会議録 Cl2-Based ECR Etching of InGaP, AlInP and AlGaP

Hong, J., Lee, J. W., Pearton, S. J., Santana, C., Abernathy, C. R., Hobson, W. S., Ren, F.

MRS - Materials Research Society
8 国際会議録 NEW DRY-ETCH CHEMISTRIES FOR III-V SEMICONDUCTORS

Pearton, S. J., Chakrabarti, U. K., Ren, F., Abernathy, C. R., Katz, A., Hobson, W. S., Constantine, C.

MRS - Materials Research Society
3 国際会議録 Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma

Ren, F., Pearton, S.J., Hobson, W.S., Lothian, J.R., Lopata, J., Cole, M.W., Caballero, J.A.

Electrochemical Society
9 国際会議録 REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2

Ren, F., Pearton, S.J., Lothian, J.R., Abernathy, C.R., Hobson, W.S.

Materials Research Society
4 国際会議録 WET AND DRY ETCHING OF InGaP

Lothian, J. R., Kuo, J. M., Pearton, S. J., Ren, F.

Materials Research Society
10 国際会議録 Small diameter dry etched via holes in GaAs

Pearton, S. J., Ren, F., Katz, A., Tseng, B., Lothian, J. R., Fullowan, T. R.

MRS - Materials Research Society
5 国際会議録 Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems

Hays, D., Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S.

Electrochemical Society
11 国際会議録 Damage Introduction in InGaP and AlGaAs by Electron Cyclotron Resonance Ar Plasmas

Lee, J. W., Pearton, S. J., Stradtmann, R. R., Abernathy, C. R., Hobson, W. S., Ren, F.

MRS - Materials Research Society
6 国際会議録 Dry Etching of InGaP and AlInP in CH4/H2/Ar

Lee, J. W., Pearton, S. J., Santana, C. J., Lambers, E. S., Abernathy, C. R., Hobson, W. S., Ren, F.

MRS - Materials Research Society
12 国際会議録 ION IMPLANTATION DOPING OF InGaP, InGaAs, AND InAIAl

Pearton, S. J., Kuo, J. M., Hobson, W. S., Hailemarian, E., Ren, F., Katz, A., Perley, A. P.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12