Development and Demonstration of a Two-Dimensional, Accurate and Computationally-Efficient Model for Boron Implantation into Single-Crystal Silicon Through Overlying Oxide Layers

Development and Demonstration of a Two-Dimensional, Accurate and Computationally-Efficient Model for Boron Implantation into Single-Crystal Silicon Through Overlying Oxide Layers

著者名:

Morris, S.

掲載資料名:

Ion-solid interactions for materials modification and processing : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

396

発行年:

1996

開始ページ:

27

出版情報:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992993 [1558992995]

言語:

英語

請求記号:

M23500/396

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017051
シリーズID:	PA00000011
会議名:	Symposium on ion-solid interactions for materials modification and processing
回次:	1995
会議開催地:	Boston, MA, USA
会議開催年:	1995.11.27-1995.12.01

類似資料:

1 国際会議録 A Two-Dimensional, Accurate and Computationally Efficient Model for Boron Implantation through Oxide Layers into Silicon Morris, S., Lim, D., Yang, S.-H., Tian, S., Parab, K., Tasch, A.F. Electrochemical Society	7 国際会議録 A MORE EFFICIENT APPROACH FOR MONTE CARLO SIMULATION OF DEEPLY-CHANNELED IMPLANTED PROFILES IN SINGLE-CRYSTAL SILICON Yang, Shyh-Horng, Lim, David, Morris, Steven J., Tasch, Al F. MRS - Materials Research Society
2 国際会議録 A NEW COMPUTATIONALLY-EFFICIENT TWO-DIMENSIONAL MODEL FOR BORON IMPLANTATION INTO SINGLE-CRYSTAL SILICON Klein, K. M., Park, C., Yang, S., Morris, S., Do, V., Tasch, A. F. Materials Research Society	8 国際会議録 Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon Obradovic,B.J., Morris,S.J., Morris,M.F., Tian,S., Wang,G., Beardmore,K., Snell,C., Jackson,J., Baummann,S., Tasch,A.F. SPIE-The International Society for Optical Engineering
3 国際会議録 An Accurate Monte Carlo Binary Collision Model for BF2 Implants into (100) Single-Crystal Silicon Yang, S.-H., Morris, S., Tian, S., Morris, M., Parab, K., Obradovich, B., Tasch, A. Electrochemical Society	9 国際会議録 Computationally efficient ion implantation damage model: modified Kinchin-Pease model Wang,G., Tian,S., Morris,M.F., Morris,S.J., Obradovic,B.J., Balamurugan,G., Tasch,A.F. SPIE-The International Society for Optical Engineering
4 国際会議録 A NEW COMPUTATIONALLY-EFFICIENT 2-D MODEL FOR BORON IMPLANTS INTO (100) SINGLE-CRYSTAL SILICON Morris, Steven J., Yang, Shyh-Horng, Lim, David H., Tasch, Al F. MRS - Materials Research Society	10 国際会議録 Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach Tian, S., Morris, M., Morris, S. J., Obradovic, B., Tasch, A. F. MRS - Materials Research Society
5 国際会議録 A New Local Electronic Stopping Model for the Monte Carlo Simulation of Arsenic Ion Implantation into (100) Single-Crystal Silicon Yang, S.-H., Morris, S., Tian, S., Parab, K., Tasch, A. F., Echenique, P. M., Capaz, R., Joannopoulos, J. MRS - Materials Research Society	11 国際会議録 Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach Tian, S., Morris, M., Morris, S. J., Obradovic, B., Tasch, A. F. MRS - Materials Research Society
6 国際会議録 Detailed Analysis and Computationally Efficient Modeling of Ultra-Shallow Dopant Profiles Obtained by Low Energy B, BF2, and As Ion Implantation Parab, K. B., Yang, S. -H., Morris, S. J., Tian, S., Morris, M., Obradovich, B., Tasch, A. F., Kamenitsa, D., Simonton, … MRS - Materials Research Society	12 国際会議録 An Electronic Stopping Power Model in Single-Crystal Silicon From a Few KeV to Several MeV Morris, S. J., Obradovic, B., Yang, S-H., Tasch, A. F., Rubin, L. MRS - Materials Research Society

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