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Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers

著者名:
Meyer, B. K.
Volm, D.
Wetzel, C.
Eckey, L.
Holst, J.-Ch.
Maxim, P.
Heitz, R.
Hoffmann, A.
Broser, I.
Mokhov, E. N.
Baranov, P. G.
Qiu, C.
Pankove, J. I.
さらに 8 件
掲載資料名:
Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
378
発行年:
1995
開始ページ:
521
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992818 [1558992812]
言語:
英語
請求記号:
M23500/378
資料種別:
国際会議録

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4 国際会議録 Selective Dynamical Study of Luminescences Near the Surface and the Interface of Epitaxial GaN

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