Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure

Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure

著者名:

掲載資料名:

Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

378

発行年:

1995

開始ページ:

509

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992818 [1558992812]

言語:

英語

請求記号:

M23500/378

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017050
シリーズID:	PA00000011
会議名:	Symposium on defect and impurity engineered semiconductors and devices
回次:	1995
会議開催地:	San Francisco, CA, USA
会議開催年:	1995.04.17-1995.04.21

類似資料:

1 国際会議録 Defect Studies of GaN Under Large Hydrostatic Pressure Wetzel, C., Fischer, S., Walukiewicz, W., Ager, J., III, Haller, E. E., Grzegory, I., Porowski, S., Suski, T. MRS - Materials Research Society	7 国際会議録 Growth of crack-free thick AlGaN layer and its application to GaN based laser diodes Akasaki, I., Kamiyama, S., Detchprohm, T., Takeuchi, T., Amano, H. MRS-Materials Research Society
2 国際会議録 Localized Donors in GaN: Spectroscopy Using Large Pressures Wetzel, C., Amano, H., Akasaki, I., Suski, T., Ager, J. W., Weber, E. R., Haller, E. E., Meyer, B. K. MRS - Materials Research Society	8 国際会議録 Spatially-Resolved Photoluminescence and Raman Study on the GaN/Substrate Interface Siegle, H., Thurian, P., Eckey, L., Hoffmann, A., Thomsen, C., Meyer, B. K., Detchprohm, T., Hiramatsu, K., Amano, H., … MRS - Materials Research Society
3 国際会議録 Piezoelectric Level Splitting in GaInN/GaN Quantum Wells Wetzel, C., Takeuchi, T., Amano, H., Akasaki, I. MRS - Materials Research Society	9 国際会議録 Photoluminescence Excitation Studies of the Optical Transitions in GaN Kovalev, D., Averboukh, B., Meyer, B-K., Volm, D., Amano, H., Akasaki, I. MRS - Materials Research Society
4 国際会議録 Carrier Localization in Gallium Nitride Wetzel,C., Walukiewicz,W., Haller,E.E., Ager,J.W.III, Chen,A., Fischer,S., Yu,P.Y., Jeanloz,R., Grzegory,I., … Trans Tech Publications	10 国際会議録 Two-Dimensional Electronic Transport in AlGaN/GaN Heterostructures Walukiewicz,W., Hsu,L., Haller,E.E. Trans Tech Publications
5 国際会議録 Fine Structure of the 3.42 eV Emission Band in GaN Fischer, S., Wetzel, C., Walukiewicz, W., Haller, E. E. MRS - Materials Research Society	11 国際会議録 Defect formation and electronic transport at AlGaN/GaN interfaces Hsu,L., Walukiewicz,W., Haller,E.E. Trans Tech Publications
6 国際会議録 Photoluminescence Related to the 2-Dimensional Electron Gas in Modulation Doped GaN/AlGaN Structures Bergman, J. P., Lundstrom, T., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society	12 国際会議録 *Spectroscopy in polarized and piezoelectric AlGaInN heterostructures Wetzel, C., Takeuchi, T., Amano, H., Akasaki, I. MRS-Materials Research Society

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