Hydrogen Diffusion and Passivation in InGaAlN Alloys

Hydrogen Diffusion and Passivation in InGaAlN Alloys

著者名:

Pearton, S. J.

掲載資料名:

Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

378

発行年:

1995

開始ページ:

497

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992818 [1558992812]

言語:

英語

請求記号:

M23500/378

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017050
シリーズID:	PA00000011
会議名:	Symposium on defect and impurity engineered semiconductors and devices
回次:	1995
会議開催地:	San Francisco, CA, USA
会議開催年:	1995.04.17-1995.04.21

類似資料:

1 国際会議録 Role of C. O and H in III-Nitrides Abernathy, C. R., Pearton, S. J., Mackenzie, J. D., Lee, J. W., Vartuli, C. B., Wilson, R. G., Shul, R. J., Zolper, J. … MRS - Materials Research Society	7 国際会議録 W, WSix and Ti/Al Low Resistance Ohmic Contacts to InGaN, InN and InAlN Vartuli, C. B., Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Shul, R. J., Zolper, J. C., Lovejoy, M. L., Baca, A. … MRS - Materials Research Society
2 国際会議録 Hydrogen Incorporation into III-V Nitrides During Processing Pearton, S.J., Shul, R.J., Wilson, R.G., Ren, F., Zavada, J.M., Abernathy, C.R., Vartuli, C.B., Lee, J.W., Mileham, … Electrochemical Society	8 国際会議録 Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN Pearton, S. J., Vartuli, C. B., Lee, J. W., Donovan, S. M., MacKenzie, J. D., Abernathy, C. R., Shul, R. J., McLane, G. … MRS - Materials Research Society
3 国際会議録 DIFFUSION OF IMPLANTED DOPANTS AND ISOLATION SPECIES IN III-V NITRIDES Pearton, S. J., Abernathy, C. R., Vartuli, C. B., Wilson, R. G., Zavada, J. M. MRS - Materials Research Society	9 国際会議録 Comparison of ICI and Ibr for Dry Etching of III-Nitrides Vartuli, C. B., Lee, J. W., MacKenzie, J. D., Pearton, S. J., Abernathy, C. R., Shul, R. J. MRS - Materials Research Society
4 国際会議録 Hydrogen Passivation of Er-Doped AlN Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Hommerich, U., Zavada, J. M., Ren, F., Wilson, R. G., Schwartz, R. … MRS - Materials Research Society	10 国際会議録 EFFECTS OF ION-IRRADIATION AND HYDROGENATION ON THE DOPING OF InGaAlN ALLOYS Pearton, S. J., Abernathy, C. R., Hobson, W. S., Ren, F. MRS - Materials Research Society
5 国際会議録 Properties of H, O and C in GaN Pearton, S. J., Abernathy, C. R., Lee, J. W., Vartuli, C. B., MacKenzie, J. D., Ren, F., Wilson, R. G., Zavada, J. M., … MRS - Materials Research Society	11 国際会議録 Plasma Damage Effects in InAlN Field-Effect Transistors Ren, F., Lothian, J. R., Chen, Y. K., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Vartuli, C. B., Lee, J. W., … MRS - Materials Research Society
6 国際会議録 Er-Doping of GaN and Related Alloys Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Schwartz, R. N., Wilson, R. G., Zavada, J. M., Shul, R. J. MRS - Materials Research Society	12 国際会議録 Dry Etch Damage in InN, InGaN and InAlN Pearton, S. J., Lee, J. W., MacKenzie, J. D., Vartuli, C. B., Donovan, S. M., Abernathy, C. R., Shul, R. J., Ren, F., … MRS - Materials Research Society

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