Deep Level Defects in GaN Characterized by Capacitance Transient Spectroscopies

Deep Level Defects in GaN Characterized by Capacitance Transient Spectroscopies

著者名:

掲載資料名:

Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

378

発行年:

1995

開始ページ:

491

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992818 [1558992812]

言語:

英語

請求記号:

M23500/378

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017050
シリーズID:	PA00000011
会議名:	Symposium on defect and impurity engineered semiconductors and devices
回次:	1995
会議開催地:	San Francisco, CA, USA
会議開催年:	1995.04.17-1995.04.21

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