Enhanced Hydrogenation Due to Ultrasound Treatment in Polycrystalline Silicon: New Approach to Thin Film Defect Engineering
- 著者名:
- 掲載資料名:
- Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 378
- 発行年:
- 1995
- 開始ページ:
- 405
- 出版情報:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992818 [1558992812]
- 言語:
- 英語
- 請求記号:
- M23500/378
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society | |
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
MRS - Materials Research Society |
Electrochemical Society |
5
国際会議録
Mechanism of ultrasonic enhanced hydrogenation in poly-Si thin films using ultrasound treatment
Trans Tech Publications |
Electrochemical Society |
Trans Tech Publications |
MRS-Materials Research Society |