Blank Cover Image

Minority Carrier Diffusion Length Improvement in Czochralski Silicon by Aluminum Gettering

著者名:
掲載資料名:
Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
378
発行年:
1995
開始ページ:
279
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992818 [1558992812]
言語:
英語
請求記号:
M23500/378
資料種別:
国際会議録

類似資料:

1 国際会議録 Gold Diffusion in Silicon During Gettering by an Aluminum Layer

Joshi, Subhash M., Gosele, Ulrich M., Tan, Teh Y.

MRS - Materials Research Society
7 国際会議録 AN EXAMINATION OF THE MECHANISMS OF Si DIFFUSION IN GaAs

Yu, Shaofeng, Gosele, Ulrich M., Tan, The Y.

Materials Research Society
2 国際会議録 Predominance of Alternate Diffusion Mechanisms for the Interstitial-Substitutional Impurity Gold in Silicon

Hui Li, Na Li, Subhash M. Joshi, Teh Y. Tan

Materials Research Society
8 国際会議録 Determination of Minority Carrier Diffusion Lengths in thi Denuded Zones of Silicon Wafers by Surface Photovoltage Measurements

Tan,L.S., Koh,S.H., Prakash,S., Choi,W.K., Zhang,Z.

SPIE - The International Society for Optical Engineering
3 国際会議録 Phosphorus and Aluminum Gettering of Gold in Silicon: Simulation and Optimization Considerations

Gafiteanu, R., Gosele, U., Tan, T. Y.

MRS - Materials Research Society
9 国際会議録 INFLUENCE OF RAPID THERMAL PROCESSING ON MINORITY CARRIER DIFFUSION LENGTH IN SILICON

Eichammer, Wolfgang A., Vu, Thuong-Quat, Siffert, P.

Materials Research Society
4 国際会議録 CRYSTAL SURFACE STOICHIOMETRY AND THE FERMI LEVEL EFFECTS ON OUTDIFFUSION OF Si IN GaAs

You, Horng-Ming, Gosele, Ulrich M., Tan, Teh Yu

Materials Research Society
10 国際会議録 Minority Carrier Diffusion Length Changes in Si Substrate Due to a High Temperature Annealing

Bellutti, P., Calderara, M., Porrini, M., Cornara, M., Olmo, M.

Electrochemical Society
5 国際会議録 Thermal equilibrium concentrations and effects of Ga vacancies in n-type GaAs

Tan, Teh Y., You, Horng-Ming, Gosele, Ulrich M.

MRS - Materials Research Society
11 国際会議録 *THE NATURE OF POIND DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURE,

Gosele, U.

North-Holland
6 国際会議録 Point Defects, Diffusion, and Gettering in Silicon

Gosele, U., Conrad, D., Werner, P., Tong, Q-Y., Gafiteanu, R., Tan, T. Y.

MRS - Materials Research Society
12 国際会議録 Influence of Metal Contamination on Minority Carrier Diffusion Length and Oxide Charge

Sakuma, J., Okui, Y., Miyazawa, H., Inoue, F., Miyajima, M.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12