The Formation of Defects Degrading Gate Oxide Integrity During CZ-Si Crystal Growth

The Formation of Defects Degrading Gate Oxide Integrity During CZ-Si Crystal Growth

著者名:

Tsumori, Y.

掲載資料名:

Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

378

発行年:

1995

開始ページ:

23

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992818 [1558992812]

言語:

英語

請求記号:

M23500/378

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00017050
シリーズID:	PA00000011
会議名:	Symposium on defect and impurity engineered semiconductors and devices
回次:	1995
会議開催地:	San Francisco, CA, USA
会議開催年:	1995.04.17-1995.04.21

類似資料:

1 国際会議録 INFLUENCE OF COOLING CONDITION DURING CRYSTAL GROWTH OF CZ-Si ON OXIDE BREAKDOWN PROPERTY Iwasaki, T., Tsumori, Y., Nakai, K., Haga, H., Kojima, K., Nakashizu, T. Electrochemical Society	7 国際会議録 Micro-Fluctuation of Growth-Rate and Grown-in Defect Distribution in Cz-Si Hasabe, M., Fukuda, J., Iwasaki, T., Harada, H., Tanaka, M. Electrochemical Society
2 国際会議録 Influence of Point Defect Concentration in Growing CZ-Si on the Formation Temperature of the Defects Affecting Gate Oxide Integrity Iwasaki,T., Harada,H., Haga,H. Trans Tech Publications	8 国際会議録 Micro-Fluctuation of Growth-Rate and Grown-in Defect Distribution in Cz-Si Hasabe,M., Fukuda,J., Iwasaki,T., Harada,H., Tanaka,M. Electrochemical Society, SPIE-The International Society for Optical Engineering
3 国際会議録 Characterization of Grown-in Defects in CZ-Si Crystals by Bright Field IR Laser Interferometer Nakai, Katsuhiko, Hasebe, Masami, Iwasaki, Toshio, Tsumori, Yasuo MRS - Materials Research Society	9 国際会議録 Formation of Oxygen Clusters in Quenched Cz- and MCz-Si Crystals Ikari,A., Haga,H., Yoda,O., Uedono,A., Ujihira,Y. Trans Tech Publications
4 国際会議録 INFLUENCE OF GROWN - IN DEFECTS IN CZ CRYSTAL ON GATE OXIDE INTEGRITY Sano, M., Hourai, M., Sumita, S., Shigematsu, T. Electrochemical Society	10 国際会議録 Formation Behaviour of Grown-in Defects in Silicon During Czochralski Crystal Growth Saishoji, T., Nakamura, K., Nakajima, H., Yokoyama, T., Ishikawa, F., Tomioka, J. Electrochemical Society
5 国際会議録 Relationship between Grown-in Defects and Thermal History during CZ Si Crystal Growth Takano,K., Kitagawa,K., Iino,E., Kimura,M., Yamagishi,H. Trans Tech Publications	11 国際会議録 Behavior of Point Defects in CZ Silicon Crystal Growth - Formation of Polyhedral Cavities and Oxidation-Induced Stacking Fault Nuclei Tanahashi, K., Inoue, N., Mizokawa, Y. MRS - Materials Research Society
6 国際会議録 IMPROVEMENT OF GATE OXIDE INTEGRITY CHARACTERISTICS IN CZ-GROWN Si CRYSTALS BY H2 ANNEALING Adachi, N., Nishikawa, H., Komatsu, Y., Hourai, H., Sano, M, Shigematsu, T. Materials Research Society	12 国際会議録 The Impact of the Dwell Time Above 900℃ During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers Dornberger, E., von Ammon, W., Graef, D., Lambert, U., Miller, A., Oelkrug, H., Ehlert, A. Electrochemical Society

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