Generation of Oxidation Induced Stacking Faults in CZ Silicon Wafers

Generation of Oxidation Induced Stacking Faults in CZ Silicon Wafers

著者名:

掲載資料名:

Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995

シリーズ名:

Materials science forum

シリーズ巻号:

196-201

発行年:

1995

パート:

4

開始ページ:

1737

終了ページ:

1742

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497164 [0878497161]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020219
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors : ICDS
回次:	18th
会議開催地:	Sendai, Japan
会議開催年:	1995.07.23-1995.07.28

類似資料:

1 国際会議録 MORPHOLOGY CHANGE OF OXIDE PRECIPITATES IN CZ SILICON DURING TWO-STEP ANNEALING Sueoka, K., Ikeda, N., Yamamoto, T., Kobayashi, S. Electrochemical Society	7 国際会議録 Hydrogen Annealing of Silicon Wafer Samata, S., Numano, M., Amai, T., Matsushita, Y., Kobayashi, K., Yamamoto, A., Kawaguchi, T., Nadahara, S., Yamabe, K. Electrochemical Society
2 国際会議録 Morphology of Oxide Precipitates in Czochralski Silicon Crystals Sueoka,K., Ikeda,N., Yamamoto,T., Kobayashi,S. Trans Tech Publications	8 国際会議録 COMPUTER SIMULATION FOR MORPHOLOGY, SIZE AND DENSITY OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON Sueoka, K., Akatsuka, M., Okui, M., Katahama, H. Electrochemical Society
3 国際会議録 Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettenng and Mechanical Strength in Epitaxial and Polished Silicon Wafers * Sueoka, K., Akatsuka, M., Onno, T., Asayama, E., Koike, Y., Adachi, N., Sadamitsu, S., Katahama, H. Electrochemical Society	9 国際会議録 COMPUTER SIMULATION FOR MORPHOLOGY, SIZE AND DENSITY OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON Sueoka, K., Akatsuka, M., Okui, M., Katahama, H. Electrochemical Society
4 国際会議録 Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettering and Mechanical Strength in Epitaxial and Polished Silicon Wafers Sueoka,K., Akatsuka,M., Onno,T., Asayama,E., Koike,Y., Adachi,N., Sadamitsu,S., Katahama,H. Electrochemical Society, SPIE-The International Society for Optical Engineering	10 国際会議録 CALCULATION OF SIZE DISTRIBUTION OF VOID DEFECT IN CZOCHRALSKI SILICON Akatsuka, M., Okui, M., Umeno, S., Sueoka, K. Electrochemical Society
5 国際会議録 Modeling of Internal Gettering for Metal Impurities by Oxide Precipitates in CZ-Si Wafer Sueoka, K. Electrochemical Society	11 国際会議録 CALCULATION OF SIZE DISTRIBUTION OF VOID DEFECT IN CZOCHRALSKI SILICON Akatsuka, M., Okui, M., Umeno, S., Sueoka, K. Electrochemical Society
6 国際会議録 CALCULATION OF SLIP LENGTH IN 300 mm SILICON WAFERS DURING THERMAL PROCESSES Akatsuka, M., Sueoka, K., Katahama, H., Adachi, N. Electrochemical Society	12 国際会議録 STUDY OF THE STACKING FAULT NUCLEI GENERATION/ DISSOLUTION TEMPERATURES ON CZ SILICON WAFERS AND ITS DEPENDENCE ON THE CRYSTAL POSITION Porrini, M., Borionetti, G., Ferrero, G. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12