Blank Cover Image

Influence of Point Defect Concentration in Growing CZ-Si on the Formation Temperature of the Defects Affecting Gate Oxide Integrity

著者名:
掲載資料名:
Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
シリーズ名:
Materials science forum
シリーズ巻号:
196-201
発行年:
1995
パート:
4
開始ページ:
1731
終了ページ:
1736
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497164 [0878497161]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 The Formation of Defects Degrading Gate Oxide Integrity During CZ-Si Crystal Growth

Tsumori, Y., Nakai, K., Iwasaki, T., Haga, H., Kojima, K., Nakashizu, T.

MRS - Materials Research Society
7 国際会議録 Investigation on Low Density Defects in Czochralski Silicon Crystals: Their Detectability, Formation Kinetics and Influence on Gate Oxide Integrity

Borionetti, G., Godio, P., Porrini, M., Ilic, S.

Electrochemical Society
2 国際会議録 INFLUENCE OF COOLING CONDITION DURING CRYSTAL GROWTH OF CZ-Si ON OXIDE BREAKDOWN PROPERTY

Iwasaki, T., Tsumori, Y., Nakai, K., Haga, H., Kojima, K., Nakashizu, T.

Electrochemical Society
8 国際会議録 Oxide Defects Annihilation/Generation by High-Temperature Annealing: A Gate Oxide Integrity Evaluation

Tamatsuka, M., Sasaki, T., Hagimoto, K., Rozgonyi, G.A.

Electrochemical Society
3 国際会議録 INFLUENCE OF GROWN - IN DEFECTS IN CZ CRYSTAL ON GATE OXIDE INTEGRITY

Sano, M., Hourai, M., Sumita, S., Shigematsu, T.

Electrochemical Society
9 国際会議録 EFFECTS OF PRE-GATE OXIDATION INTRINSIC GETTERING UPON THIN GATE OXIDE INTEGRITY IN HIGH CARBON CONTENT Cz Si

Hahn, S., Tung, C. Y., Lee, J., Tuomi, T., Partanen, J.

Materials Research Society
4 国際会議録 Micro-Fluctuation of Growth-Rate and Grown-in Defect Distribution in Cz-Si

Hasabe, M., Fukuda, J., Iwasaki, T., Harada, H., Tanaka, M.

Electrochemical Society
10 国際会議録 EFFECTS OF PRE-GATE OXIDATION INTRINSIC GETTERING UPON THIN GATE OXIDE INTEGRITY IN HIGH CARBON CONTENT Cz Si

Hahn, S., Tung, C. Y., Lee, J., Tuomi, T., Partnanen, J.

Materials Research Society
5 国際会議録 Micro-Fluctuation of Growth-Rate and Grown-in Defect Distribution in Cz-Si

Hasabe,M., Fukuda,J., Iwasaki,T., Harada,H., Tanaka,M.

Electrochemical Society, SPIE-The International Society for Optical Engineering
11 国際会議録 Formation of Oxygen Clusters in Quenched Cz- and MCz-Si Crystals

Ikari,A., Haga,H., Yoda,O., Uedono,A., Ujihira,Y.

Trans Tech Publications
6 国際会議録 IMPROVEMENT OF GATE OXIDE INTEGRITY CHARACTERISTICS IN CZ-GROWN Si CRYSTALS BY H2 ANNEALING

Adachi, N., Nishikawa, H., Komatsu, Y., Hourai, H., Sano, M, Shigematsu, T.

Materials Research Society
12 国際会議録 Gate Oxide Integrity in DRAM Devices: The Influence of Substrate D-Defects

Park, J.-G., Rozgonyi, G.A., Lee, C.-S., Choi, S.-P.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12