Effect of argon or nitrogen preamorphized implant on SALICIDE formation for deep submicron CMOS technology
- 著者名:
Ho,C.S. ( National Univ.of Singapore ) Pey,K.L. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) ) Wong,H. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) ) Karunasiri,R.P.G. ( National Univ.of Singapore ) Chua,S.J. ( National Univ.of Singapore ) Lee,K.H. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) ) Tang,Y. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) ) Wong,S.M. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) ) Chan,L.H. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) ) - 掲載資料名:
- Microlithographic Techniques in IC Fabrication
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3183
- 発行年:
- 1997
- 開始ページ:
- 243
- 終了ページ:
- 254
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819426109 [0819426105]
- 言語:
- 英語
- 請求記号:
- P63600/3183
- 資料種別:
- 国際会議録
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