Some Issues on Controlling the Morphology of the Pores Formed in Monocrystalline Silicon by Electrochemical Process

Some Issues on Controlling the Morphology of the Pores Formed in Monocrystalline Silicon by Electrochemical Process

著者名:

掲載資料名:

Physics of - Semiconductor Devices -

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3316

発行年:

1998

巻:

Part 1

開始ページ:

628

終了ページ:

631

出版情報:

New Delhi: Narosa Publishing House

ISSN:

0277786X

ISBN:

9780819427564 [081942756X]

言語:

英語

請求記号:

P63600/3316

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016921
シリーズID:	PA00000029
会議名:	International Workshop on the Physics of Semiconductor Devices - IWDPSD
回次:	1997 : 9th
会議開催地:	Delhi, India
会議開催年:	1997.12.16-1997.12.20

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